TL, OSL and EPR studies in SrAl2Si2O8:Ce phosphor prepared by solid-state reaction method

Rivera-Garcia J.A.; Rao T.K.G.; Cano N.F.; Vilca Z.V.; Pilco E.J.; Benavente J.F.; Ayala-Arenas J.S.; Mosqueira-Yauri J. · Materials Research Bulletin (2026) · DOI: 10.1016/j.materresbull.2026.114077

Resumen

This study analyzes Ce-doped SrAl2Si2O8 phosphors synthesized using the solid-state reaction method. The luminescence properties were studied by thermoluminescence (TL) and continuous wave optically stimulated luminescence (CW-OSL). The sample doped with 0.3 mol% Ce and treated at 1300 °C exhibits the highest luminescence intensity. The 200 °C peak shows a linear dose response. On the other hand, the OSL intensity shows sublinear behavior with dose. Electron paramagnetic resonance (EPR) investigations were conducted to identify radiation-induced defect centers and to elucidate their correlation with the TL and OSL processes. The EPR spectrum reveals the presence of two distinct paramagnetic centers, while thermal annealing experiments indicate the presence of a third center. Center I, exhibiting a characteristic multiline hyperfine structure, is attributed to an O⁻ ion. Centers II and III are likewise assigned to O⁻ ions, suggesting the involvement of multiple oxygen-based defect centers in the luminescence mechanism.

Instituciones: Universidad Nacional de San Agustín de Arequipa