Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers

Grieseler R.; Gallino I.; Duboiskaya N.; Döll J.; Shekhawat D.; Reiprich J.; Guerra J.A.; Hopfeld M.; Honig H.L.; Schaaf P.; Pezoldt J. · Materials Science Forum (2022) · DOI: 10.4028/p-7u1v90

Resumen

An alternative low thermal budget silicon carbide syntheses route is presented. The method is based on self-propagating high-temperature synthesis of binary silicon-carbon-based reactive mul-tilayers. With this technique, it is possible to obtain cubic polycrystalline silicon carbide at relatively low annealing temperatures by a solid state reaction. The reaction starts above 600 °C. The transformation process proceeds in a four-step process. The reaction enthalpy was determined to be (-70 ± 4) kJ/mol.

Instituciones: Pontificia Universidad Católica del Perú