Nonlinear current source model for a GaAs transistor implemented in Verilog-A using pulsed measurements

Fraquet M.A.; Rafael-Valdivia G. · 2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020 (2020) · DOI: 10.1109/lamc50424.2021.9601865

Resumen

A Verilog-A model for a GaAs MESFET was implemented and validated. A modified nonlinear equation for Ids shows good results in the modelling of DC and pulsed I-V measurements. Transient simulations were performed, showing some of the dispersive effects in RF transistors due to the presence of traps.

Instituciones: Universidad Nacional de San Agustín de Arequipa