Analysis in the Nonlinear Region of a MOSFET using Physical Characteristics and the BSIM4 Library

Vilca Zamata F.J.; Echaiz Espinoza G.A.; Quispe Mamani C.A.; Cayllahua Chire I.R.; Mamani Apaza P.A.; Mayta Ojeda C.; Echaiz Espinoza F.E. · SSRG International Journal of Electrical and Electronics Engineering (2026) · DOI: 10.14445/23488379/ijeee-v13i7p101

Resumen

This paper the nonlinear response of a 65 nm MOSFET in moderate inversion and saturation regions is analyzed through a mathematical formulation. Harmonic components are derived from the drain current expression by employing modified Bessel functions. These results are compared with numerical simulations performed in the NGSpice environment using the BSIM4 library. The simulations allow us to verify the appearance and magnitude of the harmonics found analytically. In addition, the analysis is replicated using MATLAB, facilitating parametric evaluation and detailed visualization of the current harmonic. The bias conditions are also analyzed to minimize unwanted harmonics, for which criteria are evaluated that allow the design of analog circuits with low distortion. Finally, all associated codes and findings have been made available to the public in an online repository.

Instituciones: Universidad Nacional de San Agustín de Arequipa